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Презентация на тему Silicon wafer separation

Content: Object of splittingWays of splittingResearch
Silicon wafer separation Content: Object of splittingWays of splittingResearch Object of splittingChemicalinteractionstrength limitDiameter: 50..300ммThickness: 100..1000mkmMax temperature difference(thermal cleavage)Properties Ways of splittingCutting with diamond bladeAbrasive-jet etchingChemical etchingLaser etchingUltrasonic drilling Advantages of abrasive-jet etchingYields per waferAny form of crystals(3,4,5,6-angles, circle)no pollution of Direction of process researchTesting of modesMathematical modeling of the process Thanks for watching!
Слайды презентации

Слайд 2 Content:
Object of splitting
Ways of splitting
Research

Content: Object of splittingWays of splittingResearch

Слайд 3 Object of splitting
Chemical
interaction
strength limit
Diameter: 50..300мм
Thickness: 100..1000mkm

Max temperature difference
(thermal

Object of splittingChemicalinteractionstrength limitDiameter: 50..300ммThickness: 100..1000mkmMax temperature difference(thermal cleavage)Properties

cleavage)
Properties


Слайд 4 Ways of splitting
Cutting with diamond blade
Abrasive-jet etching
Chemical etching
Laser

Ways of splittingCutting with diamond bladeAbrasive-jet etchingChemical etchingLaser etchingUltrasonic drilling

etching
Ultrasonic drilling


Слайд 5 Advantages of abrasive-jet etching
Yields per wafer
Any form of

Advantages of abrasive-jet etchingYields per waferAny form of crystals(3,4,5,6-angles, circle)no pollution

crystals(3,4,5,6-angles, circle)
no pollution of wafer
low cost process
high performance
the

ability to process plates of different thicknesses
environmentally friendly process

Слайд 6 Direction of process research
Testing of modes
Mathematical modeling of

Direction of process researchTesting of modesMathematical modeling of the process

the process


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